High-Throughput Combination Memory for 3G Mobile Phones

ASIA : Sharp Corporation has developed a high-speed combination flash/SCRAM*1 memory device featuring a throughput of 320 MBps (bytes/second), more than three times the transfer rate of its predecessor model*2. The LRS1887 High-Speed Memory is optimal for advanced third-generation mobile phones as well as other applications requiring high-speed transfer of large volumes of data. Sharp is currently shipping samples of the LRS1887, and will start mass production in July 2005.

As third-generation mobile phones with faster network speeds continue to evolve, mobile phone hardware is becoming increasingly sophisticated with higher-resolution megapixel CCD cameras, the inclusion of full-motion video functions, and diverse software applications. As such, these enhanced mobile phone functions demand faster processing speeds for large-capacity data.

This newly developed LRS1887 high-capacity 512-Mbit combination flash/SCRAM memory uses an AD Bus that multiplexes the address bus, which specifies the memory access target, onto the data bus that transfers data to the CPU chip. This architecture makes it possible to achieve high-speed data transfers at rates as high as 320 MBps without increasing the number of pins required to make external connections as well as keep the 32-bit bus width.

Incorporating this device in product designs will enable high-speed data transfers, facilitating smooth operation with data-intensive applications such as 3D graphics processing, and will contribute to the evolution of even greater functionality in mobile phones.

*1 SCRAM (Smartcombo RAM) is high-capacity RAM that delivers ease of use equivalent to conventional SRAM.
*2 Compared to Sharp’s existing product (LRS18AZ with data transfer rate of 108 MBps).

Product name Combination memory with high-speed data transfer mode for third-generation mobile phones
Model LRS1887
Sample price
(including tax) 6,300 yen

Samples available July, 2005
Monthly production 100,000 units

Major Features
1. AD Bus for throughput more than three times faster than previous model.
2. 512 Mbit high-capacity combination memory.

Features
1. AD Bus for throughput three times faster than previous model.
AD Bus (address bus multiplexed onto data bus) compatible with existing pin configurations allows 32-bit bus width without increasing the pin count, providing high-speed data throughput (320 MBps) three times faster than its predecessor model while increasing operating frequency.

Previous product:
LRS18AZ, 16-bit bus width flash/SCRAM, 54 MHz, 108 MBps (bytes/second)
New product:
LRS1887, 32-bit bus width flash/SCRAM, 80 MHz, 320 MBps (bytes/second)

2. 512 Mbit high-capacity combination memory.
Flash memory (256 Mbit) plus SCRAM (256 Mbit) for a total of 512-Mbit high-capacity combination memory, ideal for third-generation mobile phones.

Specifications
Combination memory with high-speed data transfer mode for third-generation mobile phones
Power supply voltage 1.7 to 1.95 V
Memory configuration SCRAM: 256 Mbits (bus width: 32 bits)
Flash: 256 Mbits (bus width: 16 bits)
Access time Flash memory 80 MHz
SCRAM 80 MHz
Operating temperature range –25°C to +85°C
Package size 9 mm x 12 mm, 107-pin CSP