| ALL TODAY'S PRESS RELEASES SEE BELOW |
| Micro Power Amplifier for 3G Phones |
|
11th June 2003 |
|
Toshiba will show the micro power amplifier module, along with other new microwave and RF devices, at this year's IEEE MTT-S International Microwave Symposium, held June 10 through 12 in Philadelphia, Pennsylvania. Toshiba's micro power amplifier is targeted for use in 3G phones using the W-CDMA protocol, a technology for wideband digital audio communications of Internet, multimedia and other capacity demanding applications. W-CDMA has been selected for the third generation of mobiles telephone systems in Europe, Japan and the United States. "Toshiba is committed to maintaining its position as a leading global provider of advanced RF solutions," said Hideki Ohto, senior manager of application engineering for Small Signal Discrete Semiconductor Devices, Toshiba Corporation. "This micro power amplifier for W-CDMA cell phones is an example of our continued innovation to meet industry demands for improved performance while reducing component size and power consumption." The S-AL57 achieves high output power (Po) of 27.0 decibels (dBm) and gain of 27.5dB with high power added efficiency of 46%. This new power amplifier incorporates additional functions optimized for cellular handsets, including low idle current of only 40mA, a bias circuit with temperature compensation and lower power sensitivity control functions. It operates from a single 3.5V power supply. As a GaAs HBT power amplifier module with a bias circuit, the S-AL57 provides excellent linearity, enabling design engineers to achieve high output power. The small 8-pin package (4.0 x 4.0 x 1.2 millimeters) enables engineers to create smaller handset designs. The power amplifier module includes the required RF matching circuits within the package to simplify system design. Technical Specifications Toshiba S-AL57 Micro Power Amp for W-CDMA Part Number S-AL57 Output Power (Po) 27.0dBm Power Gain (Gp)
27.5 dB @Vcc=3.5V, Po= 27.0dBm, Power Added Efficiency 46% @Vcc=3.5V, Po=27.0dBm, f=1.95GHz Idle Current 40mA Process GaAs HBT Packaging 8-pin Dimensions 4.0mm x 4.0mm x 4.0mm Pricing and Availability Samples of Toshiba's S-AL57 GaAs power amplifier will be available in July 2003, priced at $15.00 each. Volume production is scheduled to begin in first quarter 2004. |
| TODAY'S
PRESS RELEASES |
The
joint venture envisages Aftek Infosys bringing in 49% of the equity and
the rest being contributed by Mr. Niran Talgeri, the Chief Technology
Officer of 3 - the UK based 3G Product and Services Company formerly known
as Hutchison 3G, UK. |
The
UMTS Forum believe that for terrestrial IMT-2000 it is vital that the
band 2500-2690 MHz, which was identified by WRC-2000 for IMT-2000 on a
global basis, needs to be unconstrained by interference from Broadcasting
Satellite systems (BSS) in the relevant parts of the band. |
Toshiba's
micro power amplifier is targeted for use in 3G phones using the W-CDMA
protocol, a technology for wideband digital audio communications of Internet,
multimedia and other capacity demanding applications. |
3G
networks, which have yet to launch in earnest, have promised to answer
that call, but hotspots, or Wi-Fi applications, are currently providing
plausible solutions for the experienced wireless user. |
3
Italia, the Italian mobile phone start-up controlled by Hong Kong giant
Hutchison Whampoa, does not plan to match a move by its British sister
company and launch a fierce price war. |
The
latest findings from TNS reveal that Asia is ready to adopt next generation
wireless services and pay extra for them, supporting its role as one of
the world’s most sophisticated mobile markets. |
 |
| 3G Home |
| 3G Forum |
| Subscribe To Newsletter |
| All Material Subject to Copyright. All logos, graphics and trademarks are the property of their respective owners. |
To
meet industry requirements for small, lower-power circuits for cell
phones, Toshiba announced that the company has extended its line-up
of RF gallium arsenide (GaAs) hetero-junction bipolar transistor (HBT)
modules to include a micro power amplifier for 3G W-CDMA cellular handsets.
The new device, designated S-AL57, features very low power consumption,
high output power and additional functions optimized for cellular handsets.