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Samples Of First Single-Chip 3G W-CDMA / UMTS RF Transceiver

20th March 2003

Infineon Technologies announced new product developments in its Memory Products Business Unit, which reinforce Infineon’s leadership role as a supplier of DRAM for the PC and server, battery-powered system and networking device markets. Infineon has also started sampling the first fully integrated single-chip W-CDMA/UMTS RF transceiver for 3G applications.

First silicon of Infineon’s DDR2 (second-generation DDR) memory chips.

Engineering samples of a 1GB (gigabyte) DDR SO-DIMM (small-outline DIMM) for high-end notebook and laptop PCs.

A new 512Mb SDRAM component in the company’s family of small-foot-print, low-power Mobile-RAM devices.

Production release of Reduced Latency DRAM (RLDRAM) in 256 Mb density, and the availability of a RLDRAM Development Platform from The Memec Group, an Infineon distribution partner in North America.

Infineon has started sampling the first fully integrated single-chip W-CDMA/ UMTS RF transceiver.

First Samples of 512Mb DDR2 SDRAMs Now Available – Infineon has begun internal qualification of 512Mb DDR2 (second-generation Double-Data-Rate) SDRAM. Targeted for use in next-generation servers, workstations, high-end PCs and notebooks, DDR2 memory will initially offer data rates per pin of 400 Mbps (megabits per second), 533 Mbps and 667 Mbps. Memory modules designed using the 533 Mbps data rate, for example, would have a bandwidth of 4.3 GBps (gigabytes per second).

The JEDEC compliant, 512Mb DDR2 chips, manufactured using Infineon`s next generation 110 nm DRAM process technology, are configured as quad-bank DRAMs, and will be available in x4, x8 and x 16 organizations. Additional features of the new components include a pre-fetch size of 4 bits, differential strobe and variable data-output impedance adjustment.

Infineon expects that DDR2 components will appear in end-user systems in 2004.

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TODAY'S PRESS RELEASES
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